71V016SA12BF8

Memory IC Overview

The Renesas Electronics 71V016SA12BF8 is a 1 Mbit (64 K x 16) asynchronous static random-access memory (SRAM). It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 12 ns. The device utilizes a parallel interface and supports single data rate (SDR) operations. It is housed in a 48-pin CABGA package, suitable for surface-mount installation. The component is rated for commercial operating temperatures between 0°C and +70°C, with a maximum power supply current of 150 mA.

Memory IC Feature Summary

• Asynchronous parallel SRAM architecture providing 1 Mbit storage capacity organized as 64K words by 16 bits.
• High-speed data access with a maximum access time of 12 ns for efficient system integration.
• Single voltage operation compatible with standard 3.3 V logic levels using a 3.0 V to 3.6 V supply range.

Memory IC Applications

• Data buffering in high-speed digital signal processing systems
• Cache memory implementation in embedded microcontroller applications
• Industrial control systems requiring fast random-access storage

Memory IC Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm pinout compatibility and package dimensions. Ensure the selected variant matches the required operating temperature range and humidity sensitivity class for the target application environment. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and authenticity.

Memory IC Selection Notes

Select this component when a 1 Mbit asynchronous SRAM with 12 ns access speed is required in a compact 48-pin CABGA package. Consider the 3.3 V operating voltage and commercial temperature range limits during system design. Evaluate alternative suffixes if industrial temperature ratings or different packaging formats are necessary for the specific deployment scenario.

Memory IC Part Context

This part belongs to the Renesas 71V016SA series of asynchronous SRAMs. The series offers various speed grades and packaging options to support diverse memory requirements. The 71V016SA12BF8 specifically provides a balance of performance and form factor for space-constrained designs needing reliable volatile memory storage.

Memory IC Replacement Considerations

Check for direct substitutes such as IDT71V016SA12BFG8 or other variants within the same family that share identical electrical specifications and pin configurations. Verify package compatibility before substitution.