71V3558S166PFGI8

Overview

The 71V3558S166PFGI8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 4.5 Mbit, organized as 256K x 18 bits. The device supports a maximum clock frequency of 100 MHz with an access time of 5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and functions across a temperature range of -40°C to +85°C. The component utilizes a parallel interface and is housed in a 100-TQFP package.

Feature Summary

• Supports high-speed synchronous data transfer via a parallel interface architecture
• Designed for low-latency operations with fast access times suitable for performance-critical applications
• Operates reliably across extended industrial temperature ranges

Applications

• High-performance embedded systems requiring rapid data buffering
• Network infrastructure equipment utilizing synchronous memory interfaces
• Industrial control systems operating under variable thermal conditions

Procurement Notes

Verify current availability status as the component may be subject to discontinuation or limited distribution channels. Confirm that the specific package variant matches design requirements. Ensure compliance with moisture sensitivity level handling procedures during assembly. Cross-reference official datasheets for any recent product change notifications affecting specifications or sourcing.

Selection Notes

Select this component when a synchronous SRAM solution with a 18-bit data width and 100 MHz operation is required. Consider the 100-TQFP package constraints for PCB layout. Evaluate power consumption limits against the specified maximum current draw. Ensure the system logic levels align with the 3.3V core voltage specification.

Part Context

This part belongs to the 71V3558 series of synchronous SRAMs from Renesas Electronics. It shares architectural similarities with other devices in the family but differs in organization and speed grades. The series targets applications needing reliable, high-speed volatile memory solutions without the complexity of DRAM refresh cycles.

Replacement Considerations

IDT71V3558S166PFGI8