71V3559S75BQ

Memory IC Overview

The IDT71V3559S75BQ is a 4.5Mb (256K x 18) synchronous SDR ZBT SRAM IC manufactured by Renesas Electronics Corporation. It features parallel interface with a 7.5 ns access time, operating within a 3.135V to 3.465V supply voltage range and 0°C to 70°C temperature. The device is housed in a 165-CABGA (13x15) surface-mount package.

Memory IC Feature Summary

• Supports high-performance system speeds through zero wait-state burst operations
• Eliminates dead cycles between read and write transitions
• Features internally synchronized output buffer enable for simplified control

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory applications in embedded processors
• Network switching equipment data path storage

Memory IC Procurement Notes

Verify component authenticity and datasheet alignment due to discontinuation status. Confirm RoHS compliance requirements as the part may not meet current standards. Validate package integrity upon receipt. Check for specific manufacturing date codes relevant to project lifecycle. Ensure substitute parts are qualified if this component is no longer available for new orders.

Memory IC Selection Notes

Select this part for designs requiring fast synchronous SRAM with pipelined outputs. Consider the 165-CABGA package constraints for PCB layout. Evaluate power consumption against system thermal limits. Verify compatibility with 3.3V logic levels and 2.5V I/O requirements if applicable. Assess availability risks given potential end-of-life status.

Memory IC Part Context

This component belongs to the IDT71V3559 family of synchronous ZBT SRAMs. It shares architectural similarities with other devices in the series, offering high-density memory in compact packages. The family targets applications needing low-latency data access without complex bus turnaround delays.

Memory IC Replacement Considerations

IDT71V3559SA75BQ serves as a verified alternative within the same product line.