8205A

FET, MOSFET Arrays Overview

The UMW 8205A is a dual N-channel enhancement mode MOSFET housed in an SOT-23-6 package. It features a drain-source voltage rating of 20V and a continuous drain current of 5A. The device utilizes Trench Mosfet technology to achieve low on-state resistance, specified as a maximum of 27mΩ at VGS=4.5V and ID=5A, or 36mΩ at VGS=2.5V and ID=3A. Key electrical characteristics include a gate threshold voltage of 1.2V typical, total gate charge of 23nC, and a power dissipation capability of 0.83W at 25°C ambient temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with Trench Mosfet technology for low on-resistance
• Optimized for fast switching applications with low gate charge
• High reliability and rugged design suitable for demanding environments

FET, MOSFET Arrays Applications

• Portable equipment
• Battery powered systems

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer documentation when sourcing this component, as multiple vendors produce parts under the 8205A designation. Confirm that the datasheet matches the UMW specification regarding the SOT-23-6 package and the 20V/5A ratings. Ensure the ordering information aligns with the required lead-free and environmental compliance standards defined by the supplier.

FET, MOSFET Arrays Selection Notes

Select the UMW 8205A for circuits requiring dual N-channel switching with low drive voltage requirements. The 27mΩ on-resistance at 4.5V makes it suitable for battery-powered loads. Consider the 0.83W power dissipation limit and thermal resistance when designing heat management solutions for continuous operation scenarios.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual N-channel enhancement mode MOSFETs commonly used in portable electronics. It serves as a compact solution for load switching and protection circuits where space constraints necessitate the SOT-23-6 surface mount package. The device integrates two independent channels within a single footprint.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 20V/5A rating and SOT-23-6 package. Verify on-resistance values below 36mΩ at 2.5V to ensure compatibility with low-voltage drive signals.