IGBT Modules A2C50S65M2-F product image

A2C50S65M2-F

$43.07
  • Description:IGBT MOD 650V 50A 208W ACEPACK2
  • Series:-

SKU:7bb6b4325ed9 Category: Brand:

  
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A2C50S65M2-F is listed in the IGBT Modules range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IGBT MOD 650V 50A 208W ACEPACK2. Review the specifications below when checking this part for your BOM.

IGBT Modules specifications for A2C50S65M2-F

  • Description:IGBT MOD 650V 50A 208W ACEPACK2
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:ACEPACK™ 2
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:208 W
  • Current - Collector Cutoff (Max):100 µA
  • Input Capacitance (Cies) @ Vce:4.15 nF @ 25 V

IGBT Modules datasheet and documents for A2C50S65M2-F

A2C50S65M2-F

IGBT Modules Overview

The A2C50S65M2-F is a single IGBT module from STMicroelectronics, utilizing the ACEPACK-2-35 package. It features a Converter-Inverter-Brake (CIB) configuration with a trench gate field-stop IGBT M series technology. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current of 50 A at 25°C. The saturation voltage is 1.95 V, with a power dissipation rating of 208 W. The device operates within a temperature range of -40°C to +150°C and has a maximum gate-emitter voltage of 20 V.

IGBT Modules Feature Summary

  • Integrates trench gate field-stop IGBT M series technology for optimized balance between conduction and switching losses.
  • Utilizes ACEPACK-2-35 packaging with DBC Cu Al2O3 Cu substrate for thermal efficiency.
  • Incorporates an integrated NTC thermistor for precise temperature monitoring.
  • Features fast soft recovery diodes suitable for high-frequency converter systems.

IGBT Modules Applications

  • Converter systems operating up to 20 kHz
  • Inverter circuits requiring CIB topology
  • Brake chopper applications in motor drives

IGBT Modules Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm RoHS compliance status via official datasheets. Ensure storage conditions align with semiconductor handling standards to prevent moisture damage prior to soldering. Validate package integrity upon receipt.

IGBT Modules Selection Notes

Select this module for designs requiring 650 V blocking capability and 50 A continuous current. The ACEPACK-2-35 package suits screw-mount installations. Consider the 1.95 V saturation voltage for low-loss conduction requirements. Ensure thermal management supports the 208 W dissipation rating within the specified operating temperature range.

IGBT Modules Part Context

This component belongs to the A2C50S65M2 family, specifically the -F suffix variant. It shares the core IGBT die and CIB topology with other members but may differ in packaging or specific terminal configurations. It represents ST's trench gate field-stop technology implementation for medium-power industrial applications.

IGBT Modules Replacement Considerations

Direct substitutes are not explicitly listed in public documentation. Evaluate modules with identical 650 V/50 A ratings and ACEPACK-2-35 footprint. Verify pinout compatibility and thermal resistance characteristics before substitution.

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