A2I09VD030GNR1

RF Amplifiers Overview

The A2I09VD030GNR1 is a wideband integrated power amplifier utilizing Airfast RF LDMOS technology. It operates within the 575 MHz to 1300 MHz frequency range and delivers an average output power of 4 W at a 48 V supply voltage. The device provides a gain of 34.3 dB with a P1dB compression point of 33.3 dB. Packaged in a TO-270WBG-15 surface-mount format, it features on-chip matching for broad-band usability.

RF Amplifiers Feature Summary

• Wideband operation from 575 MHz to 1300 MHz
• Integrated on-chip matching network
• Airfast RF LDMOS construction

RF Amplifiers Applications

• Broadband RF power amplification
• Wireless infrastructure systems
• Test and measurement equipment

RF Amplifiers Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm package integrity upon receipt. Check datasheet revisions for updated electrical characteristics. Ensure ESD-safe handling procedures are followed during storage and assembly. Validate compatibility with existing thermal management designs.

RF Amplifiers Selection Notes

Select this component for applications requiring wideband coverage between 575 MHz and 1300 MHz. Consider the 48 V operating voltage and 4 W average power capability. Evaluate the TO-270WBG-15 package for surface-mount integration. Assess thermal requirements based on the specified power dissipation levels.

RF Amplifiers Part Context

This part belongs to NXP's Airfast series of RF LDMOS devices. It is designed for high-efficiency power amplification in broadband applications. The integrated matching simplifies circuit design compared to discrete solutions. It serves as a key component in modern wireless communication infrastructure.

RF Amplifiers Replacement Considerations

No public confirmed substitute part numbers are available.