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A2I09VD030NR1 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is IC RF AMP TO270WB. Review the specifications below when checking this part for your BOM.
The A2I09VD030NR1 is a wideband RF power amplifier IC from NXP Semiconductors, designed for operation within the 575 to 1300 MHz frequency range. This multi-stage LDMOS device features integrated on-chip matching networks to simplify circuit design. It delivers an average output power of 4 W while operating at a drain voltage of 48 V. The component is housed in a TO-270WB-15 surface-mount package, suitable for high-reliability applications requiring broad bandwidth coverage.
Verify the specific ordering suffix against the official NXP datasheet to confirm exact electrical characteristics and packaging configuration. Ensure compatibility with existing thermal management solutions due to the TO-270WB-15 form factor. Confirm that the 48 V supply requirement aligns with system power constraints before procurement.
Select this component when a single-device solution covers 575 to 1300 MHz without external matching networks. Consider the 48 V bias requirement and 4 W average power limit relative to system efficiency goals. Evaluate the TO-270WB-15 footprint against available PCB space and thermal dissipation capabilities for the intended application environment.
This part belongs to NXP's Airfast series of wideband RF power transistors. These devices are engineered for robustness and ease of integration in demanding RF environments. The A2I09VD030NR1 variant specifically targets applications requiring consistent gain and linearity across a significantly wider bandwidth than narrowband alternatives.
Public confirmed substitute part numbers are not available in the provided documentation.
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