A2T08VD020NT1

RF FETs, MOSFETs Overview

The A2T08VD020NT1 is a dual-channel N-channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates within the 728 to 960 MHz frequency range with a maximum drain-source voltage of 105 Vdc and an operating voltage up to 55 Vdc. The device delivers 2 W average output power at 48 Vdc, achieving typical drain efficiencies between 18.7% and 21.5%. It features on-chip matching for a 50-ohm input and integrated ESD protection.

RF FETs, MOSFETs Feature Summary

• Greater negative gate-source voltage range for improved Class C operation
• On-chip matching providing a 50 ohm input that is DC blocked
• Integrated quiescent current temperature compensation with enable/disable function
• Integrated electrostatic discharge (ESD) protection

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Single-carrier W-CDMA signal processing
• RF power amplification in the 728–960 MHz band

RF FETs, MOSFETs Procurement Notes

Verify the datasheet revision date against the manufacturer's official records before implementation. Confirm that the T1 suffix corresponds to the specific tape and reel packaging requirements for your assembly line. Ensure that thermal management solutions align with the junction-to-case thermal resistance specifications provided in the technical data.

RF FETs, MOSFETs Selection Notes

Select this component when designing amplifiers requiring high linearity and efficiency in the 700 MHz or 900 MHz bands. The dual-channel architecture supports balanced push-pull configurations. Verify that the application can accommodate the required gate bias voltages and that the PCB layout supports the exposed pad source terminal for optimal thermal dissipation.

RF FETs, MOSFETs Part Context

This device belongs to NXP Semiconductors' Airfast RF Power LDMOS transistor family. It utilizes lateral DMOS technology optimized for high power density and reliability in wireless infrastructure. The PQFN package facilitates efficient heat transfer from the exposed backside source terminal to the substrate.

RF FETs, MOSFETs Replacement Considerations

Consult the official NXP product finder for direct replacements within the A2T series. Verify pin compatibility and electrical parameters such as breakdown voltage and gain before substituting.