A2T18S160W31GSR3

RF FETs, MOSFETs Overview

The A2T18S160W31GSR3 is an Airfast RF Power LDMOS transistor manufactured by NXP Semiconductors. It operates within the 1805 MHz to 1995 MHz frequency band and delivers a typical average output power of 32 W at a drain voltage of 28 V. The device provides a typical gain of 19.9 dB at 1880 MHz with a drain efficiency of 31.6%. It utilizes the NI-780GS-2L2LA surface mount package.

RF FETs, MOSFETs Feature Summary

• Airfast LDMOS technology for high power density
• Integrated input/output matching network
• RoHS compliant construction

RF FETs, MOSFETs Applications

• Cellular base station power amplifiers
• Wireless infrastructure systems
• Broadband RF power amplification

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the official NXP datasheet to confirm the exact package variant and compliance status. Confirm that the component meets all relevant environmental directives required for your manufacturing process before finalizing procurement.

RF FETs, MOSFETs Selection Notes

Select this component when designing for the 1805–1995 MHz band requiring approximately 32 W average output power. Ensure the design supports a 28 V supply and accommodates the thermal requirements associated with the specified package type.

RF FETs, MOSFETs Part Context

This part belongs to the NXP Airfast portfolio, which specializes in high-performance LDMOS transistors for wireless infrastructure. These devices are engineered to meet the rigorous demands of modern cellular standards and broadband applications.

RF FETs, MOSFETs Replacement Considerations

A2T18S160W31SR3