A2T21S260W12NR3

RF FETs, MOSFETs Overview

The A2T21S260W12NR3 is an N-Channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 2110 to 2200 MHz frequency range and delivers 56 W average output power at a 28 Vdc drain supply voltage. The device features internal matching on both input and output ports, facilitating integration into broadband amplifier designs.

RF FETs, MOSFETs Feature Summary

• Optimized for Doherty amplifier architectures
• Capable of withstanding extremely high output VSWR conditions
• Supports improved Class C operation via extended negative gate-source voltage range
• Internally matched for simplified circuit implementation

RF FETs, MOSFETs Applications

• Cellular base station power amplifiers
• Wide instantaneous bandwidth RF systems
• Digital predistortion error correction systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity prior to assembly, as the OM-880X-2L2L plastic housing requires specific soldering profiles outlined in application notes. Ensure static-safe handling protocols are followed during storage and installation to prevent electrostatic discharge damage to the semiconductor junction.

RF FETs, MOSFETs Selection Notes

Select this component for designs demanding high linearity and efficiency across broad frequency spans. Evaluate thermal management requirements carefully, as the junction-to-case thermal resistance dictates heat dissipation needs. Verify that the bias network supports the specified quiescent current and gate voltage ranges for optimal performance under varying load conditions.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors. It utilizes silicon technology and is housed in the OM-880X-2L2L surface-mount package. The device is engineered specifically for high-power radio frequency applications, distinguishing itself through robustness against mismatched loads and compatibility with advanced modulation schemes.

RF FETs, MOSFETs Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing should only be performed using manufacturer-approved equivalents to ensure electrical and mechanical compatibility.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225 °C.

How is the source terminal connected in the OM-880X-2L2L package?

The exposed backside of the package serves as the source terminal for the transistor.

Is the device internally matched?

Yes, the part is internally matched on both the input and output ports.