A3G26D055N-100

RF FETs, MOSFETs Overview

The A3G26D055N is an Airfast RF Power GaN Amplifier designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the frequency range of 100 to 2690 MHz and delivers 8 W average output power at a drain voltage of 48 Vdc. The device utilizes a symmetrical Doherty architecture with high terminal impedances for optimal broadband performance. It is housed in a DFN 7 × 6.5 mm package.

RF FETs, MOSFETs Feature Summary

• Symmetrical Doherty RF power GaN amplifier optimized for massive MIMO active antenna systems
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Designed for low complexity analog or digital linearization systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems for 5G base stations

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing, as the T4 suffix indicates a tape and reel quantity of 2,500 units on a 16 mm width, 13-inch reel. Confirm that the required package matches the DFN 7 × 6.5 mm specification. Ensure compliance with moisture sensitivity level 3 requirements during storage and handling to maintain component integrity prior to assembly.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring an internally matched GaN amplifier with a broad operational bandwidth from 100 MHz to 2690 MHz. The device supports a recommended operating voltage of 48 Vdc and is suitable for applications demanding high ruggedness against output mismatches. Consider the thermal resistance characteristics and the necessity for precise biasing sequences to ensure reliable operation in Doherty configurations.

RF FETs, MOSFETs Part Context

This part belongs to NXP Semiconductors' Airfast series of RF power amplifiers. These devices are engineered using GaN-on-Si technology to provide high power density and efficiency. The A3G26D055N specifically addresses the needs of modern wireless infrastructure by offering wideband capabilities and robust performance in challenging RF environments typical of advanced cellular networks.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.