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A3G26D055N-1805 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET GAN 48V 6DFN. Review the specifications below when checking this part for your BOM.
The NXP A3G26D055N is an Airfast RF Power GaN Amplifier designed for cellular base station applications requiring wide instantaneous bandwidth from 100 to 2690 MHz. It features a symmetrical Doherty architecture with 8 W average output power at 48 Vdc. The device operates within a case temperature range of -55°C to +150°C and withstands high output VSWR conditions.
Verify the exact ordering suffix against the manufacturer's current documentation, as standard availability may vary by region. Confirm moisture sensitivity level (MSL) requirements and reflow soldering guidelines prior to assembly. Ensure proper biasing sequences are followed during testing to prevent device degradation.
Select this component for designs requiring symmetrical Doherty amplification across the 100-2690 MHz band. Verify thermal management capabilities meet the specified channel-to-case thermal resistance. Ensure the application supports the required 48 Vdc operating voltage and gate bias configurations.
This part belongs to NXP's Airfast series of RF power GaN amplifiers. It is specifically engineered for infrastructure markets demanding high linearity and efficiency in wideband operations. The symmetrical Doherty design allows for optimized performance across broad frequency ranges typical in modern wireless communications.
Consult official NXP documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical characteristics, and thermal specifications.
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