RF FETs, MOSFETs A3G26D055N-1805 product image

A3G26D055N-1805

$272.05
  • Description:RF MOSFET GAN 48V 6DFN
  • Series:-

SKU:4833b134cff2 Category: Brand:

  
  • Quantity
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A3G26D055N-1805 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET GAN 48V 6DFN. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for A3G26D055N-1805

  • Description:RF MOSFET GAN 48V 6DFN
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Bulk
  • Technology:GaN
  • Frequency:100MHz ~ 2.69GHz
  • Gain:13.9dB
  • Voltage - Test:48 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:40 mA
  • Power - Output:8W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-LDFN Exposed Pad
  • Supplier Device Package:6-PDFN (7x6.5)
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for A3G26D055N-1805

A3G26D055N-1805

RF FETs, MOSFETs Overview

The NXP A3G26D055N is an Airfast RF Power GaN Amplifier designed for cellular base station applications requiring wide instantaneous bandwidth from 100 to 2690 MHz. It features a symmetrical Doherty architecture with 8 W average output power at 48 Vdc. The device operates within a case temperature range of -55°C to +150°C and withstands high output VSWR conditions.

RF FETs, MOSFETs Feature Summary

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity analog or digital linearization systems

RF FETs, MOSFETs Applications

  • Cellular base station applications
  • Massive MIMO active antenna systems for 5G base stations

RF FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against the manufacturer's current documentation, as standard availability may vary by region. Confirm moisture sensitivity level (MSL) requirements and reflow soldering guidelines prior to assembly. Ensure proper biasing sequences are followed during testing to prevent device degradation.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring symmetrical Doherty amplification across the 100-2690 MHz band. Verify thermal management capabilities meet the specified channel-to-case thermal resistance. Ensure the application supports the required 48 Vdc operating voltage and gate bias configurations.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast series of RF power GaN amplifiers. It is specifically engineered for infrastructure markets demanding high linearity and efficiency in wideband operations. The symmetrical Doherty design allows for optimized performance across broad frequency ranges typical in modern wireless communications.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical characteristics, and thermal specifications.

A3G26D055N-1805A3G26D055N-1805
$272.05
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