A3I35D012WNR1

RF Amplifiers Overview

The A3I35D012WNR1 is a wideband integrated power amplifier utilizing Airfast RF LDMOS technology. It operates within the 3200 MHz to 4000 MHz frequency range, delivering an average output power of 1.8 W at a supply voltage of 28 V. The device provides a gain of 30.5 dB with an operating supply current of 260 mA. Designed for cellular base station applications requiring very wide instantaneous bandwidth capability, it is housed in a TO-270WB-17 package.

RF Amplifiers Feature Summary

• Utilizes Airfast RF LDMOS technology for high performance
• Designed for wide instantaneous bandwidth capability
• Suitable for cellular base station applications

RF Amplifiers Applications

• Cellular base stations
• Wideband RF amplification
• Broadband communication systems

RF Amplifiers Procurement Notes

Verify the specific part number suffix against official NXP documentation to confirm exact specifications and packaging details. Ensure compatibility with existing thermal management solutions due to the power dissipation characteristics of LDMOS devices. Confirm RoHS compliance status through the manufacturer's latest datasheet before procurement.

RF Amplifiers Selection Notes

Select this component when a wideband solution is required for cellular infrastructure. The 1.8 W average power output and 30.5 dB gain are suitable for mid-power stages. Consider the TO-270WB-17 package size for PCB layout constraints. Evaluate thermal requirements based on the 28 V supply and 260 mA current draw.

RF Amplifiers Part Context

This part belongs to NXP Semiconductors' Airfast RF LDMOS wideband integrated power amplifier family. These components are engineered for robust performance in demanding RF environments. The series offers various power levels and frequency ranges tailored for modern wireless communication standards.

RF Amplifiers Replacement Considerations

The A3I35D012WN is listed as a related variant. Verify pinout and electrical parameters against the A3I35D025WNR1 if higher power is needed, but note that direct substitution requires careful evaluation of thermal and impedance matching requirements.