A3T18H360W23SR6

RF FETs, MOSFETs Overview

The A3T18H360W23SR6 is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. Operating within the 1805 to 1880 MHz frequency range, it delivers a typical average output power of 63 W at 28 Vdc. The device features integrated input and output matching networks in an ACP-1230S-4L2S package. It supports drain-source voltages up to 65 V and operates with junction temperatures ranging from -40°C to +225°C.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Designed for wide instantaneous bandwidth applications
• Capable of withstanding extremely high output VSWR conditions
• Optimized for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wideband linear power amplifier designs
• Digital predistortion system integration

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R6 confirms the 150-unit reel packaging configuration. Confirm that the ACP-1230S-4L2S package type matches your thermal management requirements. Ensure compatibility with 28 Vdc supply rails and check for any regional distribution restrictions before finalizing procurement plans.

RF FETs, MOSFETs Selection Notes

Select this component when designing asymmetric Doherty amplifiers for the 1800 MHz band. It is suitable for applications demanding high linearity and efficiency under wide instantaneous bandwidth conditions. Consider its internal matching capabilities to simplify circuit layout and impedance transformation requirements.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power LDMOS transistor series. It is specifically engineered for high-power cellular infrastructure. The device integrates carrier and peaking sections into a single package to facilitate compact Doherty amplifier implementations.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without validating pinout, thermal resistance, and electrical performance parameters against the original datasheet.

RF FETs, MOSFETs FAQ

How are the drain supplies configured for this device?

VDDA and VDDB must be tied together and powered by a single DC power supply.

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225°C.

Are input and output matching networks included?

Yes, the device is internally matched on both the input and output sides.