A3T23H450W23SR6

RF FETs, MOSFETs Overview

The A3T23H450W23SR6 is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 2300 to 2400 MHz frequency range and delivers 87 W average output power at a 30 V DC supply. The device features N-Channel enhancement-mode lateral MOSFET technology housed in an ACP-1230S-4L2S package. Key electrical parameters include a drain-source voltage rating of 65 V, gate-source voltage limits from -6.0 V to +10 V, and a junction temperature range up to +225 °C. Typical performance metrics show a power gain of 14.7 dB and a drain efficiency of 47.0% under single-carrier W-CDMA conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance integrated Doherty architecture optimized for digital predistortion error correction systems
• Capable of withstanding extremely high output VSWR and broadband operating conditions without degradation
• Features an extended negative gate-source voltage range to facilitate improved Class C operation

RF FETs, MOSFETs Applications

• Cellular base station amplifiers requiring wide instantaneous bandwidth
• Single-carrier W-CDMA signal processing
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP Semiconductors distribution channels. Confirm that the specific ordering suffix matches the required tape and reel specifications. Ensure all handling procedures adhere to electrostatic discharge protection standards defined in the datasheet. Validate thermal management solutions against the specified junction-to-case thermal resistance values prior to integration.

RF FETs, MOSFETs Selection Notes

Select this component for designs necessitating high linearity and efficiency in wideband cellular environments. The internal matching simplifies circuit layout compared to discrete alternatives. Evaluate thermal constraints carefully as the device supports high junction temperatures. Consider the specific biasing requirements for the carrier and peaking sections to achieve optimal Doherty performance.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor series by NXP Semiconductors. It utilizes silicon technology to provide robust performance in demanding RF power applications. The ACP-1230S-4L2S package facilitates efficient heat dissipation and reliable mounting for high-power density modules.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.