A5G07H800W19NR3

RF FETs, MOSFETs Overview

The A5G07H800W19NR3 is an asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications. It operates within the 717 MHz to 850 MHz frequency range and delivers 112 W average output power at a 48 Vdc drain supply. The device features high terminal impedances for broadband performance and withstands extreme output VSWR conditions. It utilizes a plastic OM-780-4S4S package with an exposed backside source terminal.

RF FETs, MOSFETs Feature Summary

• High terminal impedances optimized for broadband performance
• Advanced in-package asymmetrical Doherty architecture
• Capable of withstanding extremely high output VSWR
• Plastic over-molded package construction

RF FETs, MOSFETs Applications

• Cellular base station amplification
• Wide instantaneous bandwidth infrastructure
• Broadband operating conditions requiring ruggedness

RF FETs, MOSFETs Procurement Notes

Verify the R3 suffix indicates a 250-unit tape and reel configuration on a 13-inch reel with 44 mm width. Confirm the component status against the latest NXP documentation, as product availability may change. Ensure design compatibility with the specified OM-780-4S4S plastic package dimensions and thermal requirements before finalizing procurement.

RF FETs, MOSFETs Selection Notes

Select this amplifier for designs requiring guaranteed performance specifically within the 717 MHz to 850 MHz band. Performance is not guaranteed outside these frequencies. Consider the 50 Vdc recommended operating voltage and the specific biasing sequence required for Doherty configurations. Verify thermal management capabilities align with the provided channel-to-case thermal resistance data.

RF FETs, MOSFETs Part Context

This component belongs to the NXP Airfast series of RF power GaN amplifiers. It is characterized for use in cellular infrastructure where wide bandwidth and high linearity are critical. The device integrates carrier and peaking sides into a single package to simplify Doherty amplifier implementation.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.