A5G35H120NT2

RF FETs, MOSFETs Overview

The A5G35H120NT2 is an 18 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 3300 to 3800 MHz frequency range and is characterized for performance in this band. The device utilizes a DFN 7 × 10 package and is supplied in a tape and reel format with 2,000 units per reel.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Designed for low complexity linearization systems
• Optimized for massive MIMO active antenna systems for 5G base stations

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems for 5G base stations

RF FETs, MOSFETs Procurement Notes

Verify the T2 suffix indicates a 2,000-unit quantity on a 24 mm tape width and 13-inch reel. Confirm the component is the production version A5G35H120N. Ensure the application operates strictly within the 3300 to 3800 MHz band, as performance guarantees do not extend outside this specified frequency range.

RF FETs, MOSFETs Selection Notes

Select this part for designs requiring an integrated asymmetrical Doherty architecture in a compact DFN package. It supports low-complexity digital linearization and handles high output VSWR. Verify compatibility with 48 Vdc drain supply and appropriate gate biasing sequences for carrier and peaking sides.

RF FETs, MOSFETs Part Context

This component belongs to NXP's Airfast RF Power GaN Amplifier series. It is specifically engineered for modern wireless infrastructure, addressing the need for high efficiency and linearity in wideband cellular deployments. The internal matching simplifies integration into reference circuits.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

RF FETs, MOSFETs FAQ

What is the guaranteed frequency range for this amplifier?

Performance is guaranteed for applications operating in the 3300 to 3800 MHz band.

How is the device packaged and supplied?

It is housed in a DFN 7 × 10 package and supplied in a tape and reel configuration containing 2,000 units.

Is this device suitable for automotive applications?

No, unless expressly stated, the product is not suitable for automotive use and is not qualified according to automotive testing requirements.