AFT09H310-04GSR6

RF FETs, MOSFETs Overview

The AFT09H310-04GSR6 is a silicon RF power MOSFET transistor manufactured by NXP Semiconductors. It operates at a frequency of 900 MHz and delivers an output power of 310 W. The device utilizes Ni1230-4GS packaging technology. This component is classified as an end-of-life product, indicating it is no longer in active production.

RF FETs, MOSFETs Feature Summary

• High-power RF performance capability
• Silicon-based semiconductor construction
• Specialized Ni1230-4GS package design

RF FETs, MOSFETs Applications

• RF power amplification
• Broadband transmitter systems
• Industrial radio equipment

RF FETs, MOSFETs Procurement Notes

This component is officially designated as End of Life (EOL) by the manufacturer. Availability is restricted to existing stock or secondary market sources. Verify authenticity and condition carefully when sourcing from non-authorized distributors. Confirm RoHS compliance status through specific documentation before integration into new designs.

RF FETs, MOSFETs Selection Notes

Designers should consider this part only for legacy system maintenance or repair scenarios due to its discontinued status. New product development requires selecting current NXP RF MOSFET alternatives with guaranteed supply chains. Evaluate thermal management requirements associated with high-power dissipation in similar form factors.

RF FETs, MOSFETs Part Context

This device belongs to NXP's portfolio of RF power transistors designed for demanding communication applications. It represents a high-power segment within the company's historical silicon RF offerings. The specific model indicates specialized packaging optimized for high-frequency operation at 900 MHz.

RF FETs, MOSFETs Replacement Considerations

No direct public substitute part numbers are confirmed for this specific EOL component. Engineers must consult NXP technical support for current equivalent recommendations suitable for 900 MHz, 310 W applications.