AFT09S200W02GNR3

RF FETs, MOSFETs Overview

The AFT09S200W02GNR3 is an RF LDMOS transistor manufactured by NXP USA Inc., designed for high-power radio frequency applications. It operates with a rated voltage of 65 V and a test voltage of 28 V, delivering a power output of 45 W at a frequency of 2.4 GHz. The device features a gain of 17.9 dB and requires a test current of 1.1 A. It is housed in an NI-780GS-2L surface-mount package, ensuring reliable performance in demanding RF environments.

RF FETs, MOSFETs Feature Summary

• High-efficiency LDMOS technology optimized for RF power amplification
• Robust surface-mount packaging for automated assembly integration
• Designed for stable operation at standard RF test voltages

RF FETs, MOSFETs Applications

• Wireless communication infrastructure base stations
• Industrial, Scientific, and Medical (ISM) band equipment
• Point-to-point microwave radio links

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix 'NR3' against official NXP documentation to confirm tape-and-reel packaging specifications. Confirm end-of-life status or obsolescence notices prior to procurement, as availability may be limited. Ensure compatibility with existing NI-780GS-2L footprints on printed circuit boards. Cross-reference thermal resistance values from the datasheet for heatsink design requirements.

RF FETs, MOSFETs Selection Notes

Select this component when a 45 W output power at 2.4 GHz is required within a compact surface-mount form factor. Consider the 65 V rating for headroom in 28 V supply systems. Evaluate the 17.9 dB gain against system noise figure requirements. Compare thermal dissipation capabilities with alternative packages if space constraints differ from the NI-780GS-2L dimensions.

RF FETs, MOSFETs Part Context

This part belongs to the AFT series of RF LDMOS transistors from NXP, which are engineered for broadband RF power amplification. The series typically supports frequencies ranging from VHF to UHF bands, with specific variants optimized for ISM applications like 2.4 GHz. These devices are commonly used in cellular infrastructure and wireless networking equipment due to their linearity and efficiency characteristics.

RF FETs, MOSFETs Replacement Considerations

Consult NXP's official replacement guide for direct equivalents. Verify pinout compatibility with the NI-780GS-2L package before substituting. Check if alternative parts maintain the same 45 W output and 2.4 GHz frequency response. Ensure thermal management solutions remain adequate for any substituted components.