AFT18S290-13SR3

RF FETs, MOSFETs Overview

The AFT18S290-13SR3 is an Airfast LDMOS broadband RF integrated amplifier designed for high-power applications. It operates within the 978 MHz to 1090 MHz frequency range, delivering a peak output power of 250 W at a 50 V supply voltage. This component is engineered for robust performance in demanding radio frequency environments, providing reliable signal amplification for communication systems requiring high efficiency and wide bandwidth capabilities.

RF FETs, MOSFETs Feature Summary

• Broadband operation across the 978–1090 MHz spectrum
• High peak output power capability of 250 W
• Integrated design optimized for 50 V supply systems
• Airfast LDMOS technology for enhanced reliability

RF FETs, MOSFETs Applications

• Base station transmitter modules
• Point-to-point microwave links
• Military communication systems
• Broadcast transmission equipment

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix 'R3' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the part number matches the exact pinout and thermal pad configuration required by your PCB layout. Cross-reference with NXP's current product status to confirm availability and lifecycle stage before finalizing procurement plans.

RF FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high power density in the UHF/L-band frequencies. Consider its integration with matching networks and thermal management solutions suitable for 250 W peak loads. Evaluate compatibility with existing 50 V power architectures and ensure the host system can handle the associated heat dissipation requirements for continuous or pulsed operation modes.

RF FETs, MOSFETs Part Context

This device belongs to NXP's Airfast LDMOS portfolio, which focuses on high-performance RF power amplification. It complements other broadband transistors and integrated amplifiers used in industrial and defense communications. The series emphasizes scalability and ease of integration into modular RF front-end designs for next-generation wireless infrastructure.

RF FETs, MOSFETs Replacement Considerations

Consult NXP's official substitution guide for equivalent LDMOS devices within the same power class. Verify that any alternative part maintains identical pinout, thermal characteristics, and frequency response to ensure seamless integration without redesigning the surrounding circuitry.