Single IGBTs AIKBE50N65RF5ATMA1 product image

AIKBE50N65RF5ATMA1

$7.93
  • Description:IGBT TRENCH FS 650V 96A TO263-7
  • Series:CoolSiC™

SKU:3ffbc4fccc4b Category: Brand:

  
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AIKBE50N65RF5ATMA1 is listed in the Single IGBTs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGBT TRENCH FS 650V 96A TO263-7. Review the specifications below when checking this part for your BOM.

Single IGBTs specifications for AIKBE50N65RF5ATMA1

  • Description:IGBT TRENCH FS 650V 96A TO263-7
  • Series:CoolSiC™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):96 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50A
  • Power - Max:326 W
  • Switching Energy:120µJ (on), 90µJ (off)
  • Input Type:Standard
  • Gate Charge:108 nC
  • Td (on/off) @ 25°C:16.8ns/136ns
  • Test Condition:400V, 25A, 9Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package:PG-TO263-7-U04
  • Grade:Automotive
  • Qualification:AEC-Q101

Single IGBTs datasheet and documents for AIKBE50N65RF5ATMA1

AIKBE50N65RF5ATMA1

Single IGBTs Overview

The AIKBE50N65RF5ATMA1 is a CoolSiC hybrid discrete integrating a TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode G5. It features a 650 V collector-emitter voltage, 96 A DC collector current at 25°C case temperature, and 326 W power dissipation. The device operates up to a maximum junction temperature of 175°C. It utilizes a PG-TO263-7-HV-ND4.2 package with seven pins, including a dedicated Kelvin emitter connection for optimized switching performance.

Single IGBTs Feature Summary

  • Integrates a TRENCHSTOP 5 fast-switching IGBT with a CoolSiC Schottky diode G5
  • Features a Kelvin emitter connection for optimized switching performance
  • Provides best-in-class efficiency in hard switching and resonant topologies
  • Qualified for automotive applications according to AEC-Q100/101

Single IGBTs Applications

  • On-board chargers
  • DC/DC converters

Single IGBTs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets all automotive qualification requirements defined in the datasheet before finalizing procurement orders.

Single IGBTs Selection Notes

Select this component for high-efficiency designs requiring robust thermal management up to 175°C. The integrated Schottky diode reduces reverse recovery losses compared to standard silicon alternatives. Verify that the PCB layout accommodates the PG-TO263-7-HV-ND4.2 package dimensions and thermal requirements.

Single IGBTs Part Context

This part belongs to Infineon's CoolSiC hybrid discrete family, combining silicon carbide technology with TRENCHSTOP 5 IGBTs. It is designed specifically for automotive-grade power electronics, offering superior switching characteristics and thermal stability over traditional silicon-only solutions.

Single IGBTs Replacement Considerations

Consult official Infineon substitution guides for verified replacements. Generic equivalents may not match the specific thermal resistance or switching energy parameters documented for this hybrid discrete configuration.

Single IGBTs FAQ

What is the maximum continuous collector current rating?

The maximum DC collector current is 96 A when the case temperature is maintained at 25°C.

Does the device include a separate gate drive pin?

Yes, Pin 1 serves as the Gate, while Pin 2 is the Kelvin Emitter, providing a dedicated low-inductance path for gate drive signals.

What is the operating junction temperature range?

The device supports an operating junction temperature range from -40°C to +175°C.

AIKBE50N65RF5ATMA1AIKBE50N65RF5ATMA1
$7.93
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