AIKYX160N75CP2ALSA1

Single IGBTs Overview

The AIKYX160N75CP2ALSA1 is a short-circuit rugged 750 V EDT2 IGBT in a reflow-solderable package co-packed with a soft and fast recovery diode. It features a collector-emitter saturation voltage of 1.22 V (typ.) at ICnom = 160 A, 25°C. The device supports DC collector currents up to 200 A at 25°C and 160 A at 100°C, with a pulsed current capability of 480 A. It withstands short circuits for 3 µs at VCE = 470 V and VGE = 15 V. Operating junction temperature ranges from -40 °C to 175 °C.

Single IGBTs Feature Summary

• Reflow soldering capability reduces system thermal resistance by up to 40% compared to traditional mounting methods.
• Kelvin emitter configuration decreases turn-on energy loss by approximately 30% relative to standard three-pin devices.
• Integrated Emcon3 diode provides fast soft recovery characteristics for low electromagnetic interference.
• Positive thermal coefficient ensures excellent current sharing when paralleling multiple units.

Single IGBTs Applications

• xEV traction inverter
• DC-link discharge switch
• Automotive auxiliary drives

Single IGBTs Procurement Notes

Verify the specific suffix ALSA1 against official Infineon documentation to confirm exact marking and packaging details. Ensure compatibility with JEDEC J-STD-020 MSL2 standards for reflow profiles. Confirm that the application design does not exceed 80% of maximum ratings for optimal reliability. Check for any recent revision updates to the datasheet before finalizing component selection.

Single IGBTs Selection Notes

Select this component for high-power automotive applications requiring robust short-circuit handling and efficient thermal management. The Kelvin emitter pin simplifies gate driver design while minimizing parasitic inductance effects. Consider the wide power pins for direct busbar connections if high-current paths are required in the layout.

Single IGBTs Part Context

This part belongs to Infineon's EDT2 family of insulated gate bipolar transistors designed specifically for automotive traction systems. It utilizes advanced trench technology to achieve low on-state voltage and fast switching speeds. The PG-TO247-4-U06 package provides high creepage distance and mechanical robustness suitable for demanding environments.

Single IGBTs Replacement Considerations

Public confirmed substitute part numbers: None identified in verified sources.

Single IGBTs FAQ

What is the maximum short-circuit withstand time?

The device can withstand a short circuit for 3 µs at VCE = 470 V and VGE = 15 V.

How does the Kelvin emitter benefit the circuit?

It separates the gate drive path from the main emitter current, reducing turn-on energy loss by about 30% and simplifying gate driver design.

Is the device qualified for automotive use?

Yes, it is qualified according to AEC-Q101 for automotive applications.