ALD110908ASAL

FET, MOSFET Arrays Overview

The ALD110908ASAL is a quad N-channel enhancement mode MOSFET array manufactured by Advanced Linear Devices Inc. using EPAD® technology. It features a standard gate threshold voltage of +0.80V with tight matching to 2mV and 10mV. Key electrical parameters include a drain-source breakdown voltage of 10.6V, continuous drain current of 12mA at VGS=+10.3V, and on-resistance of 500Ω at VGS=+4.8V. Input capacitance is 2.5pF, and power dissipation is 500mW. The device operates within a temperature range of 0°C to +70°C and is housed in an 8-pin SOIC package.

FET, MOSFET Arrays Feature Summary

• Monolithic quad N-channel enhancement mode MOSFETs matched at the factory for precision applications.
• EPAD® CMOS technology provides excellent temperature tracking and low input bias current.
• Standard gate threshold voltage of +0.80V with tight lot-to-lot parametric control.
• High DC current gain exceeding 10^8 due to extremely low gate leakage current.

FET, MOSFET Arrays Applications

• Precision current mirrors
• Voltage choppers
• Differential amplifier input stages
• Sample and Hold circuits
• Analog switches and multiplexers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Confirm that the component meets RoHS requirements if applicable to your design specifications. Ensure compatibility with the required operating temperature range of 0°C to +70°C before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage small signal applications requiring high precision matching and fast switching speeds. Consider the 10.6V breakdown voltage and 500mW power dissipation limits when designing circuit layouts. Verify that the 8-pin SOIC package dimensions fit the intended PCB footprint constraints.

FET, MOSFET Arrays Part Context

This part belongs to the ALD1108xx/ALD1109xx family of EPAD® Precision Matched Pair MOSFET Arrays. These devices are designed for analog applications where low offset voltage and differential thermal response are critical. The 'A' suffix typically denotes a specific manufacturing revision or testing criteria within the product line.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the quad N-channel configuration, +0.80V threshold voltage, and 8-pin SOIC package. Verify that any substitute component offers comparable offset voltage matching and input capacitance characteristics to maintain circuit performance.

FET, MOSFET Arrays FAQ

What is the typical gate threshold voltage for the ALD110908ASAL?

The standard gate threshold voltage (VGS(th)) is specified as +0.80V, with a tolerance range from 0.78V to 0.82V.

How does the device handle temperature variations?

The devices exhibit excellent temperature tracking characteristics due to being built on the same monolithic chip, resulting in low offset voltage temperature coefficients.

What is the maximum power dissipation rating?

The maximum power dissipation (Pd) is rated at 500 mW under standard operating conditions.