ALD111933SAL

FET, MOSFET Arrays Overview

The ALD111933 is a high-precision monolithic dual N-Channel Enhancement Mode Matched Pair MOSFET Array manufactured using EPAD® CMOS technology. It features a precision matched +3.30V threshold voltage with a maximum offset voltage of 20mV. The device operates within a supply range of +3.0V to +10V, offering low input bias current and fast switching speeds. Key electrical parameters include a typical input capacitance of 2.5pF, drain-source on resistance of 500Ω at VGS=7.3V, and a breakdown voltage of 10V. It is designed for nano-watt power applications in small signal environments.

FET, MOSFET Arrays Feature Summary

• Factory-matched dual N-Channel MOSFETs utilizing EPAD® CMOS technology for exceptional electrical characteristic matching.
• Precision +3.30V gate threshold voltage enabling ultra-low power comparator functions and near-zero drain current reference.
• High input impedance and low leakage currents suitable for precision analog and nano-power circuit designs.
• Excellent thermal tracking characteristics due to monolithic construction, minimizing differential thermal response.

FET, MOSFET Arrays Applications

• Precision current mirrors and sources
• Discrete voltage comparators and detectors
• Analog switches and multiplexers
• Sample and hold circuits
• Energy harvesting circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific package suffix when ordering. The 'SAL' suffix indicates an 8-pin SOIC package that is lead-free and RoHS compliant. Confirm the operating temperature range requirements match the standard commercial grade (0°C to +70°C). Contact the manufacturer directly if industrial temperature ranges or user-specified threshold voltages are required for the application.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring precise matching between two N-Channel enhancement mode devices. The fixed +3.30V threshold makes it ideal for low-voltage systems where the threshold itself serves as a coarse voltage reference. Ensure the design accounts for the 10V breakdown limit and the specific on-resistance characteristics at the intended gate drive voltage.

FET, MOSFET Arrays Part Context

The ALD111933 belongs to the ALD1108xx/ALD1109xx product family of monolithic quad and dual N-Channel MOSFETs. These devices are part of the broader EPAD® (Electrically Programmable Analog Device) family, which offers various threshold values ranging from depletion to enhancement modes. This specific model represents the enhancement mode category with a fixed +3.30V threshold.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must be sought within the ALD1108xx/ALD1109xx series or other EPAD family members with compatible threshold voltages. Standard discrete MOSFETs do not offer the factory-matched offset voltage or thermal tracking characteristics inherent to this monolithic array.

FET, MOSFET Arrays FAQ

What is the maximum offset voltage between the two matched MOSFETs?

The maximum offset voltage (VOS) between the two matched MOSFETs is specified as 20mV at IDS = 1µA.

How does the device behave in the subthreshold region?

In the subthreshold region, the drain current decreases exponentially with decreasing gate voltage, following a rate of approximately 116mV per decade of drain current decrease.

What is the typical input capacitance of the ALD111933?

The typical input capacitance (CISS) is 2.5 pF.