APT28M120L

$18.04

Description：MOSFET N-CH 1200V 29A TO264
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:240202f9275d Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT28M120L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 29A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT28M120L

Description：MOSFET N-CH 1200V 29A TO264
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：530mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：9670 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-264 [L]
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT28M120L

APT28M120L

Single FETs, MOSFETs Overview

The APT28M120L is a single N-channel Power MOSFET from Microchip Technology's POWER MOS 8 series, housed in a TO-264 (L) through-hole package. It features a drain-source voltage of 1200 V and a continuous drain current of 29 A at case temperature. The device exhibits a maximum on-resistance of 530 mΩ at 10 V gate drive and 14 A. Key electrical parameters include a gate charge of 300 nC, input capacitance of 9670 pF, and a power dissipation rating of 1135 W. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

High efficiency switching with very low switching and conduction losses
Low gate charge for reduced gate drive power and faster operation

Single FETs, MOSFETs Applications

Industrial motor drives
Power supplies
Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' corresponds to the TO-264 package variant when sourcing. Confirm datasheet revisions match your design requirements. Ensure thermal management solutions align with the 1135 W dissipation rating under actual operating conditions. Cross-reference pinouts with standard TO-264 layouts to prevent mounting errors during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust through-hole mounting. Compare on-resistance and gate charge against alternatives if driving circuitry constraints exist. Evaluate thermal performance based on ambient temperature and heatsinking capabilities. Consider the 1200 V rating for safety margins in inductive load switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the APT28M120 family, which includes variants like APT28M120B2. While sharing core electrical characteristics, package differences distinguish the L suffix (TO-264) from other form factors. The POWER MOS 8 technology emphasizes improved switching performance over previous generations.