APT30F50B

Single FETs, MOSFETs Overview

The APT30F50B is a single N-channel Power MOS 8® FREDFET manufactured by Microchip Technology. It utilizes silicon technology and features a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 500 V, a continuous drain current (Id) of 30 A at case temperature, and a maximum on-resistance (Rds(on)) of 190 mΩ. The device operates with a gate-source voltage range of ±30 V and a threshold voltage of 4 V. It supports an operating temperature range from -55°C to +150°C, with a power dissipation rating of 415 W.

Single FETs, MOSFETs Feature Summary

• Incorporates Fast Recovery Epitaxial Diode (FREDFET) technology for optimized switching performance.
• Utilizes the Power MOS 8® platform architecture for enhanced reliability and efficiency.
• Features a rugged TO-247-3 through-hole package designed for high-power thermal management.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and packaging configuration. Confirm that the component meets required RoHS compliance standards for your target market. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V blocking capability and 30 A continuous current handling are required in a through-hole format. The 190 mΩ on-resistance offers a balance between conduction losses and switching speed. Ensure the application design accommodates the specified 415 W power dissipation limits under appropriate thermal conditions.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of fast recovery MOSFETs from Microchip Technology. It is part of the broader Power MOS 8® family, which integrates advanced trench gate technology. The APT30F50B serves as a discrete solution for medium-to-high power applications requiring robust reverse recovery characteristics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 500 V, 30 A N-channel MOSFETs in TO-247 packages from various manufacturers, provided they meet or exceed the 190 mΩ Rds(on) and 30 A Id specifications. Verify pin compatibility and thermal resistance values before substitution.