APT31M100L

Single FETs, MOSFETs Overview

The APT31M100L is a single N-Channel power MOSFET module manufactured by Microchip Technology. It utilizes MOS8 technology and features a Drain-Source Breakdown Voltage (Vds) of 1 kV. The device supports a Continuous Drain Current (Id) of 32 A at case temperature. Key electrical parameters include an On-State Resistance (Rds(on)) of 380 mΩ, a Gate-Source Voltage range of ±30 V, and a Threshold Voltage (Vgs(th)) of 3 V. Power dissipation is rated at 1040 W at case temperature. Switching characteristics include a typical turn-on delay time of 39 ns, turn-off delay of 130 ns, rise time of 35 ns, and fall time of 33 ns. The operating junction temperature range extends from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes MOS8 silicon technology for high-voltage performance
• Single-channel N-Configuration for discrete switching applications
• Designed for screw mount installation via TO-264 package

Single FETs, MOSFETs Applications

• High voltage DC-DC converters
• Induction heating systems
• Motor control inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the official Microchip datasheet to confirm pinout and thermal interface specifications. Ensure the procurement channel provides the original manufacturer's data sheet for accurate electrical characterization. Confirm that the TO-264 package dimensions match the mechanical constraints of the target PCB or heatsink assembly before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 1 kV blocking voltage and 32 A continuous current capability are required in a single-chip solution. The 380 mΩ on-resistance offers a balance between conduction losses and cost for medium-power applications. Consider the 1040 W power dissipation rating relative to the available cooling infrastructure, as thermal management is critical for maintaining reliability within the specified temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip Aptex series of power MOSFET modules. These devices are engineered for robust operation in demanding power electronics environments. The APT31M100L represents a specific configuration within this family, optimized for high-voltage switching tasks where reliability and defined thermal performance are prioritized over ultra-low resistance values found in lower-voltage counterparts.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Microchip APT series parts such as APT21M100J for lower current requirements. Verify compatibility with existing gate drive circuits due to potential differences in input capacitance and threshold voltages among different module variants.