APT31N80JC3

$21.85

Description：MOSFET N-CH 800V 31A ISOTOP
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tube

SKU:98ecb8109401 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT31N80JC3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 800V 31A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT31N80JC3

Description：MOSFET N-CH 800V 31A ISOTOP
Series：CoolMOS™
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id：3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：355 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4510 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：833W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：ISOTOP®
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT31N80JC3

APT31N80JC3

Single FETs, MOSFETs Overview

The APT31N80JC3 is an N-Channel Enhancement Mode Super Junction MOSFET manufactured by Microsemi Corporation. It features a COOLMOS architecture and is housed in a SOT-227 (ISOTOP) package. The device provides a drain-source breakdown voltage of 800V and a continuous drain current of 31A at 25°C case temperature. Its maximum on-state resistance is 0.145Ω at VGS=10V and ID=22A. Key electrical parameters include a total gate charge of 180nC, input capacitance of 4510pF, and repetitive avalanche energy rating of 670mJ.

Single FETs, MOSFETs Feature Summary

Utilizes Infineon Technologies AG's COOLMOS Super Junction technology to achieve ultra-low on-resistance and low Miller capacitance.
Features an ISOTOP SOT-227 package with internally shorted source terminals for high-density circuit design.
Rated for repetitive and single-pulse avalanche energy operation.
Designed specifically for switch-mode power supply applications.

Single FETs, MOSFETs Applications

Switch-mode power supplies
High-voltage switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Microsemi Corporation or its successor entities, noting historical branding transitions from International Rectifier. Confirm the specific datasheet revision (e.g., Rev E) matches your design requirements. Ensure proper electrostatic discharge handling procedures are followed during assembly due to component sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage blocking capabilities up to 800V combined with moderate current handling. The SOT-227 package facilitates robust thermal management via direct mounting. Consider the internal body diode characteristics and reverse recovery behavior when designing synchronous rectification or freewheeling paths.

Single FETs, MOSFETs Part Context

This discrete power MOSFET belongs to the family of high-voltage silicon devices utilizing advanced trench super-junction structures. It is engineered to minimize conduction losses while maintaining reliable switching performance under high-voltage stress conditions typical in industrial and commercial power conversion systems.