APT35SM70B

Description：SICFET N-CH 700V 35A TO247-3
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:e6169f20465d Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT35SM70B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 700V 35A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT35SM70B

Description：SICFET N-CH 700V 35A TO247-3
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：145mOhm @ 10A, 20V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1035 pF @ 700 V
FET Feature：-
Power Dissipation (Max)：176W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT35SM70B

APT35SM70B

Single FETs, MOSFETs Overview

The APT35SM70B is a Silicon Carbide N-Channel Power MOSFET from Microsemi Corporation. It features a Drain-Source Voltage (VDSS) of 700 V and a Continuous Drain Current (ID) of 35 A at TC = 25°C, decreasing to 25 A at TC = 100°C. The device has a maximum Total Power Dissipation (PD) of 176 W at 25°C with a linear derating factor of 1.18 W/°C. The typical Drain-Source On Resistance (RDS(on)) is 125 mΩ at VGS = 20V and ID = 10A. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.

Single FETs, MOSFETs Feature Summary

Low on-resistance that remains virtually independent of ambient temperature
Fast switching speed enabled by low internal gate resistance
Stable operation at high junction temperatures up to +175°C
Superior avalanche ruggedness and fast reliable body diode

Single FETs, MOSFETs Applications

PV inverter, converter and industrial motor drives
Smart grid transmission & distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Microsemi datasheet specifications for voltage, current, and thermal ratings. Confirm the package type matches the required TO-247 form factor. Ensure the supplier provides traceability documentation consistent with semiconductor manufacturing standards. Check for any specific handling requirements related to electrostatic discharge protection during storage and installation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient thermal management and reduced system size. The silicon carbide technology offers lower switching losses compared to silicon solutions. Consider the 700V rating and 35A current capability for robust performance in demanding power conversion environments. Evaluate the total cost of ownership benefits derived from improved efficiency and compact design requirements.

Single FETs, MOSFETs Part Context

Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for communications, defense, aerospace, and industrial markets. This product belongs to their silicon carbide power MOSFET line, designed to increase performance over silicon MOSFET and IGBT solutions. The company is headquartered in Aliso Viejo, California, and provides advanced technical information for its discrete components.