APT40M35JVFR

$42.28

Description：MOSFET N-CH 400V 93A ISOTOP
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:5c942cab712b Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT40M35JVFR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 400V 93A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT40M35JVFR

Description：MOSFET N-CH 400V 93A ISOTOP
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：35mOhm @ 46.5A, 10V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：1065 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：20160 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：700W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：ISOTOP®
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT40M35JVFR

APT40M35JVFR

Single FETs, MOSFETs Overview

The APT40M35JVFR is a single N-channel enhancement mode power MOSFET from the Power MOS V® series, housed in an ISOTOP® SOT-227 package. It features a drain-source breakdown voltage of 400V and a continuous drain current rating of 93A at 25°C case temperature. The device exhibits a maximum on-state resistance of 35mΩ at VGS=10V and ID=46.5A. Total power dissipation is rated at 700W at 25°C. Operating junction temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Power MOS V® technology minimizes JFET effect and reduces on-resistance for improved efficiency.
Optimized gate layout enables faster switching speeds compared to previous generations.
Integrated fast recovery body diode supports high dv/dt performance.
Rated for repetitive and non-repetitive avalanche energy operation.

Single FETs, MOSFETs Applications

High-frequency DC-DC converters
Motor control systems
Uninterruptible power supplies (UPS)
Switch-mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Microchip or Microsemi distributors. Confirm datasheet revision matches procurement requirements. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to device sensitivity. Check for specific ordering suffixes if variant configurations are required.

Single FETs, MOSFETs Selection Notes

Select based on thermal management capabilities requiring screw mount installation. Evaluate total gate charge and switching times against driver circuit constraints. Consider avalanche energy ratings for inductive load protection. Verify isolation voltage requirements match system insulation standards.

Single FETs, MOSFETs Part Context

This component belongs to the Advanced Power Technology (APT) Power MOS V® family, now under Microchip Technology. The ISOTOP® package provides robust mechanical mounting and efficient heat dissipation. It serves as a discrete power switch solution within broader power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. Cross-reference with other 400V N-channel MOSFETs in SOT-227 packages only after verifying electrical parameter compatibility.