APT40M75JN

Description：MOSFET N-CH 400V 56A ISOTOP
Series：POWER MOS IV®
Mfr：Microsemi Corporation
Package：Tray

SKU:d776d2def3c9 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT40M75JN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 400V 56A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT40M75JN

Description：MOSFET N-CH 400V 56A ISOTOP
Series：POWER MOS IV®
Mfr：Microsemi Corporation
Package：Tray
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：75mOhm @ 28A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：370 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：ISOTOP®
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT40M75JN

APT40M75JN

Single FETs, MOSFETs Overview

The APT40M75JN is an N-channel enhancement mode high voltage power MOSFET from Microsemi Corporation, utilizing the POWER MOS IV technology. It features a single die ISOTOP package (SOT-227) designed for base mounting applications. The device provides a drain-source breakdown voltage of 400V and a continuous drain current of 56A at a case temperature of 25°C. Its maximum on-state resistance is specified as 0.075 ohms when driven by a gate-source voltage of 10V. Total power dissipation reaches 520W under standard thermal conditions.

Single FETs, MOSFETs Feature Summary

POWER MOS IV technology minimizes JFET effects to reduce on-resistance and increase packing density
Optimized gate layout enables faster switching speeds compared to previous generations
ISOTOP package design allows for efficient heat transfer via direct base mounting

Single FETs, MOSFETs Applications

High voltage DC-DC converters
Motor control circuits
Power supply inverters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm that the specific ordering suffix matches the required electrical tolerances and packaging format. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to the sensitive internal die structure.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust high-voltage switching capabilities with low conduction losses. Evaluate thermal management requirements carefully, as performance depends heavily on maintaining appropriate case temperatures. Consider the total gate charge specifications when designing driver circuits to ensure optimal switching efficiency and minimize switching losses in the application.

Single FETs, MOSFETs Part Context

This part belongs to the APT40M series of high voltage power MOSFETs manufactured by Microsemi. It shares the same SOT-227 ISOTOP package form factor with other variants in the lineup but differs in specific electrical ratings such as on-resistance and current handling capacity. The series represents a generation of devices optimized for improved power density and switching performance.