Single FETs, MOSFETs APT43F60L product image

APT43F60L

  • Description:MOSFET N-CH 600V 45A TO264
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:aa3e1f9f99ec Category: Brand:

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APT43F60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 45A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT43F60L

  • Description:MOSFET N-CH 600V 45A TO264
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:150mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:215 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:8590 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):780W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264 [L]
  • Package / Case:TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT43F60L

APT43F60L

Single FETs, MOSFETs Overview

The APT43F60L is a silicon N-channel Power MOSFET manufactured by Microchip Technology. It utilizes the POWER MOS 7 technology and is housed in a TO-264 [L] (D2PAK) surface-mount package. The device features a drain-source voltage rating of 600 V and a continuous drain current of 43 A at case temperature. Key electrical parameters include a maximum on-resistance of 130 mΩ at 10 V gate drive, a gate charge of 130 nC, and a power dissipation capacity of 565 W. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • POWER MOS 7 technology for high packing density and low on-resistance
  • Rugged avalanche characteristics with less critical alignment steps
  • Standard outline designed for easy automated surface mount assembly

Single FETs, MOSFETs Applications

  • High-voltage switching applications
  • Low threshold drive circuits
  • Power management systems requiring efficient thermal performance

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact pinout and packaging variations. Ensure the component matches the required voltage and current ratings for your circuit design. Cross-reference the datasheet revision history for any updates to electrical characteristics or mechanical dimensions before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V N-channel MOSFET with high current handling capability is required. Consider the 130 mΩ on-resistance for conduction loss calculations and the 565 W power dissipation for thermal management planning. Verify that the TO-264 package fits the available PCB real estate and that the gate charge requirements align with the driving circuit capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip POWER MOS 7 series, which represents an evolution in silicon carbide and silicon MOSFET technologies. The series is characterized by improved switching speeds and reduced on-state resistance compared to previous generations. The APT43F60L specifically targets applications needing robust performance in high-voltage environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600 V N-channel MOSFETs in TO-264 packages from Microchip or other manufacturers. Verify compatibility regarding on-resistance, gate charge, and thermal resistance. Ensure that any replacement maintains the same voltage and current ratings to avoid derating issues.

APT43F60LAPT43F60L

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