Single FETs, MOSFETs APT5010LVFRG product image

APT5010LVFRG

$16.66
  • Description:MOSFET N-CH 500V 47A TO264
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:85b19b70e650 Category: Brand:

  
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APT5010LVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 47A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5010LVFRG

  • Description:MOSFET N-CH 500V 47A TO264
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:100mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:470 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:8900 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264 [L]
  • Package / Case:TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT5010LVFRG

APT5010LVFRG

Single FETs, MOSFETs Overview

The APT5010LVFRG is a single N-channel Power MOSFET manufactured by Microchip Technology. It utilizes silicon technology and features a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 500 V, a continuous drain current (Id) of 47 A, and a maximum on-resistance (Rds(on)) of 100 mOhms. The device operates with a gate-source voltage range of -30 V to +30 V and has a gate charge (Qg) of 470 nC. It supports an enhancement mode operation with a threshold voltage of 2 V. The component is rated for power dissipation up to 520 W and functions within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 500 V drain-source breakdown rating
  • Low on-resistance design for efficient power switching
  • Robust thermal performance supporting high power dissipation
  • Through-hole mounting for secure mechanical installation

Single FETs, MOSFETs Applications

  • Industrial motor control systems
  • Power supply circuits
  • Inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix against official Microchip documentation to ensure correct packaging and variant specifications. Confirm RoHS compliance status directly from the manufacturer's datasheet or product compliance pages before procurement. Cross-reference the TO-247-3 package dimensions with your PCB footprint requirements to ensure mechanical compatibility. Validate that the sourcing channel provides genuine components with traceable manufacturing history.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V N-channel MOSFET with low conduction losses is required for through-hole assembly. The 47 A current rating and 100 mOhm resistance make it suitable for medium-power switching applications. Ensure the gate drive circuitry can handle the specified 470 nC gate charge for optimal switching speeds. Verify that the operating environment stays within the -55°C to +150°C junction temperature limits.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Power MOSFET family, designed for general-purpose power switching. It represents a standard discrete transistor solution in the TO-247-3 form factor. The part is distinct from integrated modules or other package variants within the broader portfolio. It serves as a fundamental building block for power electronics requiring reliable high-voltage handling.

APT5010LVFRGAPT5010LVFRG
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