Single FETs, MOSFETs APT5014BLLG product image

APT5014BLLG

$12.67
  • Description:MOSFET N-CH 500V 35A TO247
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:b50f3b041747 Category: Brand:

  
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APT5014BLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 35A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5014BLLG

  • Description:MOSFET N-CH 500V 35A TO247
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:140mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3261 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):403W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT5014BLLG

APT5014BLLG

Single FETs, MOSFETs Overview

The APT5014BLLG is a Power MOS 7 N-channel power MOSFET manufactured by Microchip Technology. It features a 500V drain-source breakdown voltage and a maximum continuous drain current of 62A at case temperature. The device exhibits a typical on-resistance of 14 milliohms at a gate-source voltage of 10V. Packaged in a TO-247-3 T-MAX format, it supports a maximum power dissipation of 580W at 25°C case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced Power MOS 7 technology for optimized performance
  • Designed with low thermal resistance characteristics for efficient heat dissipation
  • Engineered for high-speed switching applications with controlled gate charge

Single FETs, MOSFETs Applications

  • High-frequency DC-DC converters
  • Motor control systems
  • Power factor correction circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LLG' against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with TO-247 mounting requirements. Cross-reference datasheet electrical limits with system operating conditions to prevent overstress. Confirm RoHS compliance status through manufacturer declarations prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V rating and approximately 14 milliohm on-resistance are required for high-efficiency power conversion. Evaluate thermal management capabilities based on the 580W dissipation limit and package thermal resistance. Compare gate charge parameters against driver capabilities to ensure adequate switching speed without excessive losses.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Power MOS 7 series, representing an evolution in silicon power switch technology. It succeeds earlier generations by offering improved figure-of-merit metrics, combining lower on-resistance with reduced switching energy. The T-MAX packaging provides robust mechanical stability for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for direct equivalents. Verify pinout compatibility and thermal characteristics before replacing legacy components. Ensure replacement parts meet identical voltage and current ratings.

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