Single FETs, MOSFETs APT5022BNG product image

APT5022BNG

  • Description:MOSFET N-CH 500V 27A TO247AD
  • Series:POWER MOS IV®
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:01c53cd7ca77 Category: Brand:

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APT5022BNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 500V 27A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5022BNG

  • Description:MOSFET N-CH 500V 27A TO247AD
  • Series:POWER MOS IV®
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:220mOhm @ 13.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AD
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT5022BNG

APT5022BNG

Single FETs, MOSFETs Overview

The Microsemi APT5022BN is an N-channel enhancement mode high voltage power MOSFET housed in a TO-247 package. It features a drain-source breakdown voltage of 500V and a continuous drain current rating of 27A at 25°C case temperature. The device has a maximum on-state resistance of 0.22Ω at VGS=10V. Total power dissipation is rated at 108W at 25°C, with a linear derating factor of 2.9 W/°C above that temperature. Operating and storage junction temperatures range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode construction for high voltage switching applications
  • Integrated body diode with defined forward voltage and reverse recovery characteristics
  • Low thermal impedance design for efficient heat transfer in flange mount configurations

Single FETs, MOSFETs Applications

  • High voltage power switching circuits
  • Inductive load control systems
  • Motor drive implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific part number against official Microsemi documentation to confirm electrical tolerances and package variations. Ensure handling procedures account for electrostatic discharge sensitivity during installation. Confirm compliance requirements such as RoHS status if applicable to the target assembly specifications.

Single FETs, MOSFETs Selection Notes

Select this component based on the required 500V blocking capability and 27A continuous current needs. Evaluate the 0.22Ω on-resistance against expected conduction losses. Consider the TO-247 package dimensions for mechanical fit and thermal management strategy within the final enclosure design.

Single FETs, MOSFETs Part Context

This device belongs to the Aptex Power IV series of high voltage MOSFETs manufactured by Microsemi. The series provides robust performance for demanding power electronics environments. The TO-247 form factor supports reliable mounting on heatsinks for effective thermal regulation during operation.

Single FETs, MOSFETs Replacement Considerations

The APT5020BN serves as a comparable alternative within the same series, offering identical voltage ratings but a lower on-state resistance of 0.20Ω and slightly higher current capacity.

APT5022BNGAPT5022BNG

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