APT56F50B2

Single FETs, MOSFETs Overview

The APT56F50B2 is a single N-channel Fast Recovery Epitaxial Diode (FREDFET) MOS transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a T-MAX-3 through-hole package. The device features a drain-source breakdown voltage of 500 V and supports a continuous drain current of 56 A. Its maximum on-resistance is 100 mOhms, with a gate-source voltage range of ±30 V and a threshold voltage of 4 V. The total gate charge is 220 nC. Power dissipation reaches 780 W, operating within a temperature range of -55°C to +150°C junction temperature. Switching characteristics include a typical turn-on delay of 38 ns, fall time of 33 ns, rise time of 45 ns, and turn-off delay of 100 ns.

Single FETs, MOSFETs Feature Summary

• Integrates fast recovery epitaxial diode technology for efficient switching performance.
• Provides high power handling capability with significant thermal stability.
• Features low on-resistance to minimize conduction losses.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Induction heating systems
• Uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix B2 against official Microchip documentation to confirm exact pinout and mechanical dimensions. Ensure the ordering part number matches the required package variant. Cross-reference datasheet revisions to confirm electrical parameter tolerances before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust 500 V blocking capability combined with high current handling. The T-MAX-3 package facilitates effective heat dissipation for high-power applications. Evaluate switching speed requirements against the specified delay times to ensure compatibility with the target control frequency.

Single FETs, MOSFETs Part Context

This component belongs to the APT series of FREDFET MOS transistors from Microchip Technology. These devices are engineered for high-efficiency power switching applications where rapid recovery and low loss are critical. The series offers various voltage and current ratings to suit diverse industrial power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts with matching voltage, current, and package specifications. Verify that any alternative device maintains compatible switching speeds and thermal characteristics for direct integration.