APT58M50JU3

Single FETs, MOSFETs Overview

The APT58M50JU3 is a single N-channel Power MOSFET module from the POWER MOS 8 series, manufactured by Microchip Technology. It utilizes ISOTOP technology within an SOT-227-4 (miniBLOC) package designed for base mounting. The device features a drain-source voltage rating of 500 V and a continuous drain current of 58 A at case temperature. Key electrical characteristics include a maximum on-resistance of 65 mΩ at 10 V gate drive, a gate charge of 340 nC, and a power dissipation capacity of 540 W. The unit operates across a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• ISOTOP® technology provides low thermal resistance and high reliability through direct soldering to heat sinks.
• POWER MOS 8™ structure delivers optimized switching performance with reduced gate charge and fast switching times.
• Single N-channel configuration simplifies circuit design for high-power applications.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Motor control systems requiring robust switching elements
• Industrial power supplies and inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'U3' against the official Microchip datasheet to confirm exact ordering and packaging details. Ensure compatibility with SOT-227 mounting requirements and thermal management solutions suitable for 540 W dissipation. Confirm RoHS compliance status via the manufacturer's documentation before integration into regulated products.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding high voltage isolation and efficient thermal transfer in a compact footprint. The 500 V rating suits medium-voltage AC/DC interfaces. Evaluate thermal impedance against the system's heat sink capabilities to maintain junction temperatures within the specified -55°C to +150°C operational range during peak load conditions.

Single FETs, MOSFETs Part Context

This module belongs to Microchip's POWER MOS 8 family, which integrates advanced trench gate technology for improved efficiency. The ISOTOP package variant eliminates wire bonds between the die and the substrate, enhancing durability under thermal cycling compared to traditional leaded packages. It serves as a discrete power solution for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

Consult the official Microchip cross-reference guide for verified substitutes. Generic equivalents may not match the ISOTOP thermal profile or POWER MOS 8 switching characteristics. Verify pinout compatibility and thermal resistance values before considering alternative part numbers.