APT5SM170B

Description：SICFET N-CH 1700V 5A TO247-3
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:df22b7d3552b Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT5SM170B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 1700V 5A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5SM170B

Description：SICFET N-CH 1700V 5A TO247-3
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 2.5A, 20V
Vgs(th) (Max) @ Id：3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：249 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：65W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT5SM170B

APT5SM170B

Single FETs, MOSFETs Overview

The APT5SM170B is a Silicon Carbide (SiC) N-Channel Power MOSFET manufactured by Microsemi Corporation. It features a Drain-Source Voltage rating of 1700 V and a continuous drain current of 5 A at 25°C case temperature. The device has a maximum on-resistance of 1.25 Ω and operates with a junction temperature range up to 175°C. Packaged in a TO-247 housing, it provides a total power dissipation of 65 W at 25°C.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide technology for high-efficiency switching and reduced thermal losses
Features fast switching speeds enabled by low internal gate resistance
Includes a reliable body diode that eliminates the need for external free-wheeling diodes
Maintains stable operation at elevated junction temperatures up to 175°C

Single FETs, MOSFETs Applications

Photovoltaic inverters and converters
Industrial motor drives
Smart grid transmission and distribution systems
Electric vehicle powertrains and chargers
Induction heating and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the component revision status before procurement, as the datasheet indicates preliminary information. Confirm the package type matches the required TO-247 footprint and ensure the supplier provides documentation consistent with Microsemi's specifications. Cross-reference the part number against official manufacturer channels to validate authenticity and technical accuracy.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring superior thermal performance compared to traditional silicon solutions. Consider its 1700V rating and 175°C operating limit for robust designs. Evaluate the system requirements against the 5A continuous current capability and the specific switching energy characteristics provided in the dynamic parameters.

Single FETs, MOSFETs Part Context

This device belongs to Microsemi's silicon carbide power MOSFET product line. These components are engineered to increase performance over silicon MOSFET and IGBT solutions while lowering total cost of ownership. The series targets high-voltage applications demanding improved efficiency and compact system design.