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APT6013B2LLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 43A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT6013B2LLG
- Description：MOSFET N-CH 600V 43A T-MAX
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：130mOhm @ 21.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：5630 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT6013B2LLG
Single FETs, MOSFETs Overview
The APT6013B2LLG is an N-Channel Power MOSFET from Microchip Technology’s Power MOS 8 family. It features a 600 V drain-source voltage rating and a maximum on-state resistance of 130 mΩ. The device supports a continuous drain current of 43 A at case temperature and handles a pulsed drain current of 172 A. It operates within a temperature range of -55°C to +150°C and utilizes the T-MAX-3 (TO-247 MAX) through-hole package.
Single FETs, MOSFETs Feature Summary
- High-speed switching capability with reduced electromagnetic interference
- Robust thermal performance in T-MAX-3 package
- High voltage blocking for power conversion
Single FETs, MOSFETs Applications
- Switch-mode power supplies
- Motor control circuits
- Industrial power inversion
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'LLG' against official Microchip documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid traceability for the Philippines origin. Confirm RoHS compliance status via the manufacturer's environmental declaration before integration into regulated assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a 600 V rating and low Rds(on) are required for high-efficiency applications. The T-MAX-3 package offers superior thermal dissipation compared to standard TO-247 variants. Evaluate the 43 A continuous current limit against peak load requirements to ensure adequate safety margins during operation.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS 8 family, designed for high-voltage switch-mode applications. It represents an evolution in silicon technology aimed at improving switching speed and reducing EMI. The T-MAX-3 package is engineered for higher power density and better heat transfer than legacy discrete packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other APT series devices such as APT50M75B2LLG for lower voltage alternatives. Verify pin compatibility and thermal characteristics before substituting with generic 600 V N-channel MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
