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APT6040BN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 18A TO247AD. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT6040BN
- Description：MOSFET N-CH 600V 18A TO247AD
- Series：POWER MOS IV®
- Mfr：Microsemi Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：310W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247AD
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT6040BN
Single FETs, MOSFETs Overview
The APT6040BN is an N-channel enhancement mode high voltage power MOSFET manufactured by Microsemi Corporation. It features a 600V drain-source breakdown voltage and a continuous drain current of 18A at 25°C case temperature. The device has a maximum on-state resistance of 0.4Ω and supports a pulsed drain current of 72A. Total power dissipation reaches 310W at 25°C, with an operating junction temperature range from -55°C to 150°C. It utilizes a TO-247 package.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction for high voltage switching applications
- Integrated body diode with defined reverse recovery characteristics
- Flange mount TO-247 package design for efficient thermal management
Single FETs, MOSFETs Applications
- High voltage DC-DC converters
- Motor control circuits
- Power supply inverters
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation as Microsemi Corporation or its successor entities during sourcing. Confirm the specific datasheet revision matches the required electrical parameters. Ensure the component is handled using proper electrostatic discharge precautions due to sensitivity. Validate that the TO-247 package dimensions align with the target PCB footprint requirements before final procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 600V rating and 18A continuous current capability are required. Consider the 0.4Ω on-resistance for conduction loss calculations in the intended circuit topology. Evaluate the thermal impedance characteristics against the available heat sinking infrastructure. Compare the gate charge specifications against the driving circuit capabilities to ensure adequate switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS IV series of high voltage power MOSFETs. The series includes variants such as the APT6045BN which shares similar structural characteristics but differs in specific current and resistance ratings. These devices are designed for robust performance in demanding power electronics environments requiring reliable high-voltage switching.
Single FETs, MOSFETs Replacement Considerations
The APT6045BN is a documented variant within the same product family. Verify pinout compatibility and thermal interface requirements when substituting components. Ensure the replacement meets all static and dynamic electrical specifications for the specific application constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
