Single FETs, MOSFETs APT6040BNG product image

APT6040BNG

  • Description:MOSFET N-CH 600V 18A TO247AD
  • Series:POWER MOS IV®
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:a22b8d4bf494 Category: Brand:

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APT6040BNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 18A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT6040BNG

  • Description:MOSFET N-CH 600V 18A TO247AD
  • Series:POWER MOS IV®
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:400mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):310W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AD
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT6040BNG

APT6040BNG

Single FETs, MOSFETs Overview

The APT6040BN is an N-channel enhancement mode high voltage power MOSFET from Microsemi Corporation, housed in a TO-247 package. It features a drain-source breakdown voltage of 600V and a continuous drain current rating of 18A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.40Ω at VGS=10V. It supports a total power dissipation of 310W with a junction-to-case thermal resistance of 0.40°C/W. The operating and storage junction temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • High voltage capability with 600V drain-source breakdown
  • Low on-state resistance for efficient conduction
  • Robust thermal performance suitable for high power applications

Single FETs, MOSFETs Applications

  • Motor drives
  • Power supplies
  • Industrial controls

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Microsemi Corporation or its successor entities, as corporate ownership changes may affect branding. Confirm the specific datasheet revision matches the required electrical tolerances. Ensure the TO-247 package outline dimensions align with your PCB footprint requirements. Check for any specific handling instructions regarding electrostatic discharge sensitivity during procurement and assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V N-channel MOSFET with low RDS(ON) is required. Compare the 18A continuous current rating against your peak load demands. Evaluate the thermal resistance characteristics against your heatsinking strategy. Consider the gate charge parameters for switching frequency requirements in your specific circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of high voltage power MOSFETs designed for demanding power electronics applications. It utilizes advanced planar technology to achieve low on-resistance and fast switching speeds. The TO-247 package provides a reliable mechanical interface for high-power thermal management solutions commonly found in industrial and automotive sectors.

Single FETs, MOSFETs Replacement Considerations

The APT6045BN is a documented variant within the same series offering similar specifications with slightly different on-resistance and current ratings. Verify pinout compatibility and thermal characteristics before substitution.

APT6040BNGAPT6040BNG

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