APT6M100K

Single FETs, MOSFETs Overview

The APT6M100K is a high-speed, high-voltage N-channel switch-mode power MOSFET from Microsemi Corporation. It features a proprietary planar stripe design for excellent reliability and manufacturability. The device offers low switching loss with low input capacitance and ultra-low Crss Miller capacitance. Key electrical parameters include a drain-source breakdown voltage of 1000V, a continuous drain current of 6A at TC=25°C, and a maximum on-resistance of 2.50Ω at VGS=10V. It is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

• Fast switching performance with low electromagnetic interference (EMI) and radio frequency interference (RFI).
• Ultra-low reverse transfer capacitance (Crss) for improved noise immunity.
• High avalanche energy capability to enhance reliability in boost, forward, and flyback circuits.
• Intrinsic gate resistance and capacitance help control slew rates during switching.

Single FETs, MOSFETs Applications

• Power Factor Correction (PFC) and other boost converters
• Buck converters
• Two-switch forward topologies (asymmetrical bridge)
• Single-switch forward converters
• Flyback converters
• Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Confirm that the component meets all required environmental compliance standards, such as RoHS, as specified in the product documentation. Ensure thermal management solutions are compatible with the TO-220 package dimensions and mounting torque specifications provided by Microsemi.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage blocking capabilities up to 1000V and moderate current handling around 6A. Consider its low Crss and fast switching characteristics for designs prioritizing efficiency and reduced EMI. Evaluate the thermal impedance and power dissipation ratings to ensure adequate heat sinking for the intended operating conditions and duty cycles.

Single FETs, MOSFETs Part Context

The APT6M100K belongs to the Power MOS 8 family of high-speed, high-voltage N-channel switches. This series utilizes a proprietary planar stripe design to achieve superior reliability and manufacturability compared to earlier generations. The technology focuses on minimizing switching losses through optimized gate charge and capacitance profiles, making it suitable for demanding switch-mode power supply applications.

Single FETs, MOSFETs Replacement Considerations

When evaluating substitutes, verify that the alternative device matches or exceeds the 1000V breakdown voltage and 6A continuous current rating. Ensure the replacement maintains comparable on-resistance and switching speed characteristics to preserve circuit efficiency and EMI performance. Check for pinout compatibility with the TO-220 package if direct drop-in replacement is required.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating for the APT6M100K?

The single pulse avalanche energy (EAS) rating is 4 mJ, tested under specific conditions including an inductance of 68.89mH and a gate resistance of 25Ω.

How does the intrinsic gate structure affect switching performance?

The poly-silicon gate structure provides intrinsic gate resistance and capacitance that help control slew rates during switching, resulting in lower EMI and reliable paralleling even at very high frequencies.

What is the typical reverse recovery time for the integral body diode?

The typical reverse recovery time (trr) is 17 ns when measured at ISD = 3A, VDD = 100V, and a di/dt of 100A/µs.