APT8014JLL

$48.20

Description：MOSFET N-CH 800V 42A ISOTOP
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:ea709e6830dd Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT8014JLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 42A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT8014JLL

Description：MOSFET N-CH 800V 42A ISOTOP
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：140mOhm @ 21A, 10V
Vgs(th) (Max) @ Id：5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：285 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：7238 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：595W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：ISOTOP®
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT8014JLL

APT8014JLL

Single FETs, MOSFETs Overview

The APT8014JLL is an N-Channel enhancement mode power MOSFET from the Power MOS 7 series, manufactured by Microchip Technology. It features a Drain-Source Breakdown Voltage (BVDSS) of 800 V and a continuous drain current (ID) of 42 A at TC = 25°C. The maximum on-state resistance (RDS(on)) is 0.140 Ω at VGS = 10V and ID = 21A. Total power dissipation (PD) is 595 W at TC = 25°C with a linear derating factor of 4.76 W/°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes a SOT-227 package.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology combines low conduction losses with fast switching speeds via a patented metal gate structure.
Optimized for easier driving through reduced input capacitance, Miller charge, and total gate charge.
ISOTOP package design facilitates screw mounting and improved thermal management.

Single FETs, MOSFETs Applications

High voltage DC-DC converters
Motor control systems
Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer part number against official Microchip Technology documentation to ensure authenticity. Confirm that the component matches the specified SOT-227 ISOTOP package outline and pin configuration. Check for any specific handling requirements related to electrostatic discharge sensitivity as indicated in the datasheet cautions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability and moderate current handling. Consider the thermal impedance characteristics and the need for adequate heatsinking given the 595 W power dissipation rating. Evaluate gate drive requirements based on the specified gate threshold voltage and total gate charge values.

Single FETs, MOSFETs Part Context

This component belongs to the Power MOS 7 family of N-Channel enhancement mode power MOSFETs. These devices are designed to address both conduction and switching losses simultaneously. The APT8014JLL specifically offers a balance of 800V breakdown voltage and 42A continuous current capability in a robust screw-mountable package.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip Technology substitution guides or equivalent product catalogs for verified alternatives. Ensure any replacement maintains compatibility with the 800V BVDSS, 42A ID, and SOT-227 package dimensions.