APT8020B2FLLG

$28.65

Description：MOSFET N-CH 800V 38A T-MAX
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:f073ba211a6d Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT8020B2FLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 38A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT8020B2FLLG

Description：MOSFET N-CH 800V 38A T-MAX
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：220mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：5200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™ [B2]
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT8020B2FLLG

APT8020B2FLLG

Single FETs, MOSFETs Overview

The APT8020B2FLLG is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing silicon technology. It features a T-MAX™ B2 package configuration designed for through-hole mounting. Key electrical parameters include a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 38 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 200 mΩ. Gate specifications define a threshold voltage (Vgs(th)) of 4 V and a gate charge (Qg) of 150 nC. Thermal performance includes a power dissipation rating of 175 W and an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 800 V drain-source breakdown rating suitable for demanding power switching applications.
Low conduction losses achieved through optimized Rds(on) characteristics in the T-MAX™ B2 package.
Robust thermal management design supporting high power dissipation and extended junction temperature operation.

Single FETs, MOSFETs Applications

Industrial motor drives and control systems
Uninterruptible power supply (UPS) inverters
High-frequency switch-mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LLG' against the official Microchip datasheet to confirm pinout and packaging details. Ensure compatibility with existing PCB footprints for the T-MAX™ B2 package. Cross-reference thermal resistance values with system heat sink requirements. Confirm RoHS compliance status via the manufacturer's environmental declaration before integration into regulated products.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is required for high-side or low-side switching. Evaluate the 38 A current limit against peak load demands including safety margins. Compare the 200 mΩ on-resistance against alternative devices for efficiency targets. Consider the through-hole mounting style if mechanical robustness is prioritized over surface area constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip APT series of Fast Recovery Epitaxial Diode (FREDFET) MOSFETs. The T-MAX™ B2 package provides enhanced thermal performance compared to standard TO-247 variants. The series is engineered for hard-switching applications requiring fast recovery characteristics and high reliability in industrial environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the APT80xxB2FLLG family with different voltage or current ratings. Verify pin-to-pin compatibility with legacy components from other manufacturers offering similar 800 V N-channel specifications.