Single FETs, MOSFETs APT8065SVRG product image

APT8065SVRG

$11.98
  • Description:MOSFET N-CH 800V 13A D3PAK
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:925ab802a8ef Category: Brand:

  
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APT8065SVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 13A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT8065SVRG

  • Description:MOSFET N-CH 800V 13A D3PAK
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:650mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT8065SVRG

APT8065SVRG

Single FETs, MOSFETs Overview

The APT8065SVRG is a single N-channel enhancement mode silicon MOSFET manufactured by Microchip Technology. It utilizes the POWER MOS V technology and is housed in a D3PAK-3 (TO-268) surface-mount package. The device features an 800 V drain-source breakdown voltage and a continuous drain current of 13 A. Its maximum on-resistance is specified at 650 mΩ, with a gate charge of 225 nC. The component supports a power dissipation of 280 W and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 800 V drain-source breakdown rating
  • Enhanced thermal performance via D3PAK-3 surface-mount packaging
  • Optimized for low conduction losses with defined on-resistance characteristics

Single FETs, MOSFETs Applications

  • High-voltage switching circuits
  • Power conversion systems
  • Industrial motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific revision suffix and manufacturing date code upon ordering to ensure compliance with project requirements. Confirm RoHS status and lead times directly with authorized distributors or the manufacturer, as supply chain conditions may vary. Ensure proper handling procedures are followed due to electrostatic sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is required alongside moderate current handling capabilities. The TO-268 package facilitates efficient heat dissipation for high-power density designs. Evaluate the trade-off between the 650 mΩ on-resistance and the 225 nC gate charge against system efficiency targets and drive circuit complexity.

Single FETs, MOSFETs Part Context

This part belongs to the POWER MOS V series from Microchip Technology, designed for robust performance in demanding power electronics environments. The D3PAK-3 form factor provides a standardized footprint compatible with various automated assembly processes, ensuring reliable integration into printed circuit boards for industrial and commercial power supplies.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 800 V N-channel MOSFETs in the D3PAK-3 package from Microchip or other manufacturers. Verify pinout compatibility, thermal resistance values, and electrical parameters such as Rds(on) and Qg before substitution.

APT8065SVRGAPT8065SVRG
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