APT8075BN

Single FETs, MOSFETs Overview

The APT8075BN is an N-Channel Enhancement Mode High Voltage Power MOSFET manufactured by Microsemi. It features a Drain-Source Voltage (VDSS) of 800 V and a Continuous Drain Current (ID) of 13 A at TC = 25°C. The device has a maximum On-State Drain-Source Resistance (RDS(ON)) of 0.75 Ω at VGS = 10V. Total Power Dissipation (PD) is rated at 310 W at TC = 25°C with a linear derating factor of 2.48 W/°C. The operating and storage junction temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High voltage capability with 800 V drain-source breakdown rating
• Integrated body diode for inductive load switching applications
• Enhanced mode operation with low gate threshold voltage
• Robust thermal performance suitable for high power dissipation

Single FETs, MOSFETs Applications

• High voltage DC-DC converters
• Inductive load switching circuits
• Power supply output stages
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation, as Microsemi's semiconductor division was acquired by Microchip Technology. Confirm the package type matches TO-247AD specifications. Ensure static discharge handling procedures are followed during assembly. Check RoHS compliance status against specific ordering suffixes if required by your manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is necessary for high voltage isolation. The 13 A continuous current and 0.75 Ω on-resistance make it suitable for moderate power levels where efficiency is critical. Consider the thermal impedance characteristics for heatsink design. Compare with the APT8090BN if lower on-resistance is prioritized over slightly higher current capacity.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of Power MOS IV® high voltage power MOSFETs. These devices are designed for general-purpose switching applications requiring high voltage blocking capabilities. The TO-247 package provides a robust mechanical connection and efficient heat transfer path for through-hole mounting.

Single FETs, MOSFETs Replacement Considerations

The APT8090BN is a related variant within the same datasheet offering similar voltage ratings but with different current and resistance characteristics.