APT80SM120S

$27.10

Description：SICFET N-CH 1200V 80A D3PAK
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:7a750efd7edd Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT80SM120S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 1200V 80A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT80SM120S

Description：SICFET N-CH 1200V 80A D3PAK
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：235 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：625W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D3PAK
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT80SM120S

APT80SM120S

Single FETs, MOSFETs Overview

The APT80SM120S is a silicon carbide (SiC) N-Channel Field-Effect Transistor manufactured by Microsemi Corporation. It features a drain-source breakdown voltage of 1200 V and a continuous drain current rating of 80 A at 25°C. The device utilizes SiC technology for high-performance power switching applications.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide semiconductor technology for enhanced thermal performance
Designed as an N-Channel enhancement mode field-effect transistor
Engineered for high-voltage power switching operations

Single FETs, MOSFETs Applications

High-efficiency power conversion systems
Industrial motor drive inverters
Uninterruptible power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation, as Microsemi Corporation has been acquired by Microchip Technology Inc. Confirm component status, noting that this part may be classified as obsolete in certain distributor catalogs. Ensure compatibility with existing design specifications before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust high-voltage handling capabilities. Consider the 80 A current rating and 1200 V blocking voltage when designing circuits. Evaluate thermal management requirements due to the power dissipation characteristics inherent to silicon carbide devices in this package type.

Single FETs, MOSFETs Part Context

This component belongs to the family of silicon carbide power transistors produced by Microsemi. These devices are engineered to replace traditional silicon counterparts in demanding environments. The product line focuses on improving efficiency and reducing system size through superior material properties.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical parameters against potential alternatives from the same manufacturer family.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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