APTC60SKM35T1G

$29.27

Description：MOSFET N-CH 600V 72A SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:68ab6ec733fc Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APTC60SKM35T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 600V 72A SP1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTC60SKM35T1G

Description：MOSFET N-CH 600V 72A SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：35mOhm @ 72A, 10V
Vgs(th) (Max) @ Id：3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs：518 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：416W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP1
Package / Case：SP1

Single FETs, MOSFETs datasheet and documents for APTC60SKM35T1G

APTC60SKM35T1G

Single FETs, MOSFETs Overview

The APTC60SKM35T1G is a Super Junction MOSFET power module featuring an integrated chopper diode. It provides a drain-source breakdown voltage of 600V and a maximum on-resistance of 35mΩ at 25°C. The continuous drain current is rated at 72A at a case temperature of 25°C, with a pulsed current capability of 200A. Maximum power dissipation reaches 416W at 25°C. The package includes an internal NTC thermistor for temperature monitoring.

Single FETs, MOSFETs Feature Summary

Ultra low RDSon and gate charge for high frequency operation
Internal thermistor for temperature monitoring
Very rugged avalanche energy rated design
Low stray inductance construction

Single FETs, MOSFETs Applications

AC and DC motor control
Switched Mode Power Supplies
Buck chopper circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the latest Microsemi documentation to ensure compatibility with application requirements. Confirm that handling procedures address Electrostatic Discharge sensitivity as specified in application note APT0502. Check for any product change notifications or errata related to the SP1 module package before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring isolated mounting directly to heatsinks with solderable terminals for both power and signal connections. Consider the low junction-to-case thermal resistance and RoHS compliance when designing for efficient thermal management and environmental standards. Ensure gate drive voltages align with the specified threshold and leakage characteristics.

Single FETs, MOSFETs Part Context

This device belongs to the CoolMOS family developed by Infineon Technologies AG, manufactured by Microsemi Corporation. It utilizes Super Junction technology to achieve superior performance metrics compared to standard MOSFETs. The SP1 package format allows for direct mounting to heatsinks, providing an isolated interface suitable for various industrial power electronics applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Microsemi substitution guides for verified alternatives. Cross-reference electrical parameters such as VDSS, RDSon, and package dimensions to ensure functional equivalence without modifying existing PCB layouts or thermal designs.

Single FETs, MOSFETs FAQ

What is the isolation voltage rating of the module?

The RMS isolation voltage from any terminal to the case is 2500V for one minute at 50/60Hz with an isolation current less than 1mA.

How does the internal thermistor function?

An NTC thermistor is integrated into the module for temperature monitoring. Its resistance is 50kΩ at 25°C with a B constant of 3952K between 25°C and 85°C.