APTM10DAM02G

Single FETs, MOSFETs Overview

The APTM10DAM02G is a single N-channel MOSFET module from Microchip Technology, housed in an SP6C package. It features a drain-source voltage (VDSS) of 100V and a typical on-resistance (RDSon) of 2.25 mΩ. The device supports a continuous drain current of 370A at case temperatures of 80°C and handles a pulsed drain current of 1900A. Designed for high-power applications, it integrates silicon technology within a compact power module format.

Single FETs, MOSFETs Feature Summary

• Single N-channel MOSFET configuration optimized for boost chopper circuits
• Low on-resistance design to minimize conduction losses
• High current handling capability with 1900A pulsed drain current rating
• Integrated module construction for simplified thermal management

Single FETs, MOSFETs Applications

• Boost chopper converter topologies
• High-current DC-DC conversion systems
• Industrial power supply modules
• Motor drive inverters requiring low voltage drop

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against the manufacturer's latest datasheet to confirm RoHS compliance status and exact pinout configuration. Ensure the ordering part number matches the required package variant, as suffixes may indicate different packaging or material specifications. Cross-reference the SP6C package dimensions with your PCB footprint library before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 100V rated single MOSFET with high current capacity. The 2.25 mΩ RDSon makes it suitable for efficiency-critical applications where conduction loss is a primary concern. Consider the SP6C package thermal characteristics and ensure adequate heatsinking to maintain junction temperature within limits during continuous 370A operation.

Single FETs, MOSFETs Part Context

This module belongs to Microchip's discrete and power modules category, specifically under MOSFET modules. It utilizes silicon technology and is distinct from multi-FET assemblies. The SP6C package provides a standardized form factor for integration into larger power electronics systems, differentiating it from standard leaded or surface-mount discrete transistors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing VDSS, RDSon, and package dimensions against alternative offerings from other manufacturers if direct replacements are needed.