APTM120DA30CT1G

Single FETs, MOSFETs Overview

The APTM120DA30CT1G is a silicon carbide (SiC) discrete semiconductor module manufactured by Microchip Technology. It integrates an N-channel MOSFET with a SiC Schottky barrier diode (SBD). The device features a 1.2 kV drain-source breakdown voltage and a continuous drain current of 23 A. Key electrical parameters include a maximum gate-source voltage of +25 V/-10 V, a typical turn-on delay of 30 ns, and a turn-off delay of 50 ns. The module utilizes the SP1 press-in PCB package style and supports operating temperatures from -40°C to +125°C.

Single FETs, MOSFETs Feature Summary

• Integrates a high-voltage SiC MOSFET with a complementary SiC SBD for efficient power conversion.
• Utilizes a press-in mounting technology within the SP1 package for robust mechanical connection.
• Designed for high-temperature operation up to 125°C with low switching losses.

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Motor drive inverters
• Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'CT1G' against official Microchip documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid traceability for this discrete semiconductor module. Confirm that the SP1 press-in package requirements match the target PCB design specifications before ordering.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency at elevated frequencies due to its SiC technology. The integrated SBD reduces reverse recovery losses compared to standard silicon solutions. Consider the 23 A current rating and 1.2 kV voltage class when designing circuits for industrial or automotive power systems.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's Ariat series of power modules, which focus on high-performance silicon carbide solutions. The SP1 package family is designed for automated assembly via press-in technology, offering improved thermal performance and reliability over traditional screw-mount or wire-bonded alternatives in compact form factors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Microchip Technology directly for qualified replacements or cross-reference options based on specific electrical and mechanical constraints.